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STTH30AC06SP Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH30AC06SP Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics STTH30AC06FP 4/10 DocID027889 Rev 2 Figure 7: Reverse recovery time versus dIF/dt (typical values) Figure 8: Reverse recovery charges versus dIF/dt (typical values) Figure 9: Reverse recovery softness factor versus dIF/dt (typical values) Figure 10: Relative variations of dynamic parameters versus junction temperature Figure 11: Junction capacitance versus reverse voltage applied (typical values) 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 t RR (ns) dlF/dt (A/µs) IF = 30 A VR = 400 V T j = 125 °C 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 500 Q RR (nC) dlF/dt (A/µs) IF = 30 A VR = 400 V T j = 125 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 S FACTOR dlF/dt (A/µs) IF = 30 A VR = 400 V T j = 125 °C 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 QRR IF = 30 A VR = 400 V Reference: T j = 125 °C IRM SFACTOR Tj(°C) 10 100 1000 1 10 100 1000 C(pF) V R (V) F = 1 MHz V OSC = 30 mVRMS T j = 25 °C |
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