1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current, δ = 0.5 square wave

Tc = 150 °C

Per diode

20

A

Tc = 145 °C

Per device

40

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

250

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

1015

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature range(1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.20

°C/W

Total

0.85

Rth(c)

Coupling

0.50

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

30

µA

Tj = 125 °C

-

7

30

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

-

0.92

V

Tj = 125 °C

-

0.69

0.75

Tj = 25 °C

IF = 40 A

-

1.00

Tj = 125 °C

-

0.79

0.86

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.64 x IF(AV) + 0.0055 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS40170C

Characteristics

DS4412 - Rev 2

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