1

Characteristics

Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

150

V

IF(RMS) Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5, square

wave

TO-220AB, D2PAK, I2PAK TC = 155 °C Per diode

10

A

TO-220FPAB

TC = 135 °C Per diode

All types

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

180

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj= 125 °C

480

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature (1)

+ 175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, D2PAK, I2PAK

Per diode

2.2

°C/W

TO-220FPAB

4.5

TO-220AB, D2PAK, I2PAK

Total

1.3

TO-220FPAB

3.5

Rth(c)

Coupling

TO-220AB, D2PAK, I2PAK

-

0.3

°C/W

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

5.0

µA

Tj = 125 °C

-

5.0

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.92

V

-

0.69

0.75

IF = 20A

-

1.0

-

0.79

0.86

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS)

STPS20150C

Characteristics

DS2252 - Rev 12

page 2/17