STPS20150CFP datasheet(3/17 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

(A)

F(AV)

(W)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Figure 2. Average forward current versus ambient

temperature (δ= 0.5, per diode)

100

125

150

175

(°C)

amb

(A)

F(AV)

δ=tp/T

(TO-220AB, I PAK and D PAK)

th(j-a)

th(j-c)

(TO-220FPAB)

th(j-a)

th(j-c)

=15°C/W

th(j-a)

Figure 3. Normalized avalanche power derating versus

pulse (Tj= 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration (per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

th(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration (per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t (s)

th(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

I (µA)

V (V)

T =175°C

T =150°C

T =125°C

T =100°C

T =25°C

STPS20150C

Characteristics (curves)

DS2252 - Rev 12

page 3/17

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