STPS1545C datasheet(3/13 Pages) STMICROELECTRONICS

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STPS1545C

Characteristics

DocID3503 Rev 8

3/13

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

(W)

F(AV)

δ=tp/T

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

100

125

150

175

(A)

F(AV)

th(j-a )

th(j-c)

=15°C/W

th(j-a)

=40°C/W

th(j-a)

(°C)

amb

δ=tp/T

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

th(j-c )

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

I (µA)

V (V)

T =125°C

T =150°C

T =100°C

T =25°C

T =50°C

T =75°C

100

200

500

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OS C

RMS

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