Characteristics

STPS2045C

2/15

DocID3506 Rev 10

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

current

δ = 0.5, square wave

TO-220AB /

D²PAK

TC = 155 °C

Per diode

10

A

Per device

20

TO-220FPAB

TC = 140 °C

Per diode

10

TC = 125 °C

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

180

A

PARM(1)

Repetitive peak avalanche power

tp = 10 µs,

Tj = 125 °C

280

W

VARM(2)

Maximum repetitive peak avalanche voltage

tp < 10 µs,

Tj < 125 °C,

IAR < 7.7 A

60

V

VASM(2)

Maximum single-pulse peak avalanche voltage

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (3)

175

Notes:

(1)For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes

AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky

rectifier avalanche specification”.

(2)See Figure 9.

(3)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB / D²PAK

Per diode

2.2

°C/W

Total

1.4

TO-220FPAB

Per diode

4.5

Total

3.5

Rth(c)

Coupling

TO-220AB / D²PAK

0.4

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)