DMVF5 datasheet(6/9 Pages) STMICROELECTRONICS

6 / 9 page

1E-3

1E-2

1E-1

1E+0

IM(A)

Tc=100°C

DMV16

DMV32/DMV56

δ=0.5

t(s)

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (modulation diode).

1E-3

1E-2

1E-1

1E+0

IM(A)

Tc=100°C

DMV56

DMV32

DMV16

t(s)

δ=0.5

Fig. 5-1: Non repetitive surge peak forward current

versus overload duration (damper diode).

0.1

0.2

0.5

1.0

2.0

5.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Qrr(µC)

IF=IF(av)

90% confidence

Tj=125°C

DMV56

DMV32

DMV16

dIF/dt(A/µs)

Fig. 6-1: Reverse recovery charges versus dIF/dt

(damper diode).

0.1

1.0

10.0

50.0

100

150

200

250

300

350

400

450

500

Qrr(nC)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 6-2: Reverse recovery charges versus dIF/dt

(modulation diode).

0.1

0.2

0.5

1.0

2.0

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV16

DMV32

DMV56

dIF/dt(A/µs)

Fig. 7-1: Reverse recovery current versus dIF/dt

(damper diode).

0.1

1.0

10.0

100.0

IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 7-2: Reverse recovery current versus dIF/dt

(modulation diode).

DMV series

6/9

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