BYT16 datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF *

Forward voltage drop

Tj = 25

°CIF = 8 A

1.5

Tj = 100

°C

1.4

IR **

Reverse leakage

current

Tj = 25

°CVR = VRRM

µA

Tj = 100

°C

2.5

Pulse test : * tp = 380

µs, δ < 2%

** tp = 5 ms,

δ < 2%

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

3.75

°C/W

Rth(c)

Coupling

0.25

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

To evaluate the conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.024 IF

(RMS)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

trr

Tj = 25°C

IF = 1A VR = 30V dIF/dt = - 15A/

µs

IF = 0.5A IR = 1A Irr = 0.25A

RECOVERY CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

tIRM

Max im um rev er se

recovery time

dIF/dt = - 32 A/

µsVCC = 200 V

IF = 8 A

≤ 0.05 µH

Tj = 100°C

(see fig. 11)

dIF/dt = - 64 A/

µs

IRM

Max im um rev er se

recovery current

dIF/dt = - 32 A/

µs

2.2

dIF/dt = - 64 A/

µs

2.8

C =

VRP

VCC

Turn-off overvoltage

coefficient

Tj = 100°C

VCC = 120V

IF = IF(AV)

dIF/dt = - 8A/

µs

Lp = 9

µH

(see fig. 12)

3.3

TURN-OFF SWITCHING CHARACTERISTICS

Fig. 1: Low frequency power losses versus

average current.

Fig. 2: Peak current versus form factor.

BYT16P-400

2/5

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