MBR10H100CT

http://onsemi.com

2

MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

Average Rectified Forward Current

(Rated VR) TC = 168°C

IF(AV)

5.0

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 165°C

IFRM

10

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

180

A

Operating Junction Temperature (Note 1)

TJ

+175

°C

Storage Temperature

Tstg

*65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Controlled Avalanche Energy (see test conditions in Figures 10 and 11)

WAVAL

100

mJ

ESD Ratings: Machine Model = C

Human Body Model = 3B

> 400

> 8000

V

THERMAL CHARACTERISTICS

Maximum Thermal Resistance − Junction−to−Case

− Junction−to−Ambient

RqJC

RqJA

2.0

60

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 5.0 A, TC = 25°C)

(IF = 5.0 A, TC = 125°C)

(IF = 10 A, TC = 25°C)

(IF = 10 A, TC = 125°C)

vF

0.73

0.61

0.85

0.71

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

iR

4.5

0.0035

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.