BD712 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.67

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ICBO

Collector Cut -of f

Current (IE =0)

for BD707/708

VCB =60 V

for BD709

VCB =80 V

for BD711/712

VCB = 100 V

Tcase =150

for BD707/708

VCB =60 V

for BD709

VCB =80 V

for BD711/712

VCB = 100 V

100

µA

ICEO

Collector Cut -of f

Current (IB =0)

for BD707/708

VCE =30 V

for BD709

VCE =40 V

for BD711/712

VCE =50 V

100

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(s us)

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =100 mA

for BD707/708

for BD709

for BD711/ 712

100

VCE(sat)

∗ Collector-Emitter

Sat uration Volt age

IC =4 A

I B =0.4 A

VCEK

∗

Knee Voltage

IC =3 A

I B =**

0. 4

VBE

∗

Base-Emitter Voltage

IC =4 A

VCE =4 V

1. 5

hFE

∗

DC Current Gain

IC =0.5 A

VCE =2 V

IC =2 A

VCE =2 V

for BD707/708

for BD709

IC =4 A

VCE =4 V

IC =10 A

VCE =4 V

for BD707/708

for BD709

for BD711/ 712

120

400

150

Transition frequency

IC =300 mA

VCE =3 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

** Value for which IC = 3.3 A at VCE = 2V.

For PNP types voltage and current values are negative.

BD707/708/709/711/712

2/6

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