BDW83C datasheet(2/4 Pages) STMICROELECTRONICS

Part #	BDW83C

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.96

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

Tcase = 150

oC

500

5

µA

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 40 V

1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 30 mA

100

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 6 A

IB = 12 mA

IC = 15 A

IB = 150 mA

2.5

4

V

VBE(on)

∗ Base-Emitter Voltage

IC = 6 A

VCE = 3 A

2.5

V

hFE

∗

DC Current Gain

IC = 6 A

VCE =3 V

IC = 15 A

VCE =3 V

750

100

20000

Vf*

Diode Forward Voltage

IF = 10 A

4

V

ton

toff

Turn-on Time

Turn-off Time

VCC = 30 V

IC = 10 A

RB1 = 300

Ω

RB2 = 150

Ω

IB1 = - IB2 = 40 mA

0.9

6

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BDW83C / BDW84C

2/4

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