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V1.0

16/09/19

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Electrical Characteristics: (T

A = +25°C Unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Max

Unit

OFF Characteristics

Collector - Base Breakdown Voltage

V(BR)CBO

lC = 100µA, IE = 0

180

-

V

Collector - Emitter Breakdown Voltage V(BR)CEO

lC = 1mA, IB = 0, Note 2

160

Emitter - Base Breakdown Voltage

V(BR)EBO

lE = 10µA, IC = 0

6

Collector Cut - Off Current

ICBO

VCB = 120V, IE = 0

-

50

nA

VCB = 120V, IE = 0, TA = +100°C

uA

Emitter Cut - Off Voltage

IEBO

VEB = 4V, IC = 0

nA

ON Characteristics (Note 2)

DC Current Gain

hFE

VCE = 5V, lC = 1mA

80

-

-

VCE = 5V, lC = 10mA

250

VCE = 5V, lC = 50mA

30

-

Collector - Emitter Saturation Voltage

VCE(sat)

lC = 10mA, IB = 1mA

-

0.15

V

lC = 50mA, IB = 5mA

0.2

Base - Emitter On Voltage

VBE(sat)

lC = 10mA, IB = 1mA

1

lC = 50mA, IB = 5mA

Small-Signal Characteristics

Current Gain Bandwidth Product

fT

VCE = 10V, lC = 10mA, f = 100MHz

100

300

MHz

Output Capacitance

Cobo

VCB = 10V, lE = 0, f = 1MHz

-

6

pF

Input Capacitance

Cibo

VBE = 0.5V, lC = 0, f = 1MHz

20

Small-Signal Current Gain

hfe

VCE = 10V, lC = 1mA, f = 1kHz

50

200

-

Noise Figure

NF

VCE = 5V, lC = 250µA, f = 1kHz, RS = 1kΩ

-

8

dB

Note:

2. Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%