BFR99 datasheet(2/4 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB = – 15 V

– 100

V(B R)CBO

Collector–base Breakdowm

Voltage (IE =0)

I C =– 100

µA

– 25

VCE O(sus)*

Collector–emitter Sustaining

Voltage (IB =0)

I C = – 5 mA

– 25

V(B R)E BO

Emitter–base Breakdown

Voltage (IC =0)

I E =– 10

µA– 3

VBE

Base–emitter Voltage

IC = – 10 mA

VCE = – 10 V

– 0.75

h FE*

DC Current Gain

I C =– 1 mA

I C =– 10 mA

I C =– 20 mA

VCE =– 10 V

f T

Transition Frequency

I C =– 10 mA

f = 200 MHz

VCE =– 15 V

GHz

C re

Reverse Capacitance

I C =0

f = 1 MHz

VCE =– 15 V

0.4

Noise Figure

I C =– 3 mA

R g =50

Ω

I C =– 10 mA

R g =50 Ω

VCE =– 15 V

f= 200 MHz

f= 800 MHz

VCE =– 15 V

f= 200 MHz

f= 800 MHz

2.5

3.5

* Pulsed : pulse duration = 300

µs, duty cycle = 1%.

THERMAL DATA

R th j– case

Rth j–amb

Thermal Resistance Junction–case

Thermal Resistance Junction–ambient

Max

486

777

°C/W

BFR99

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