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P5NK80Z Datasheet(PDF) 5 Page - STMicroelectronics

Part # P5NK80Z
Description  N-channel 800V - 1.9廓 - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH??Power MOSFET
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P5NK80Z Datasheet(HTML) 5 Page - STMicroelectronics

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STP5NK80Z - STP5NK80ZFP
Electrical characteristics
5/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
800
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 2.15 A
1.9
2.4
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 2.15A
4.25
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
910
98
20
pF
pF
pF
Cosseq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
40
pF
td(on)
tr
td(off)
tr
Turn-on delay time
Rise time
Turn-on delay time
fall time
VDD=400 V, ID= 2 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
18
25
45
30
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640V, ID = 4.3A
VGS =10V
32.4
5
18.5
45.5
nC
nC
nC
td(Voff)
tr
Off-voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 4.3 A,
RG=4.7Ω, VGS=10V
(see Figure 20)
22
10
32
ns
ns
ns



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