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IXFN48N60P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN48N60P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1291 eq IXFN48N60P N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pulse 110 A PD Total Dissipation @TC=25℃ 625 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.2 ℃ /W D G S S SOT-227 package |
Similar Part No. - IXFN48N60P |
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Similar Description - IXFN48N60P |
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