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PHB60N06T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PHB60N06T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor PHB60N06T www.iscsemi.com 1 FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · DC-to-DC Converter · General Industrial Applications · Power Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pulse 232 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W 2 2 3 1 |
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