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AS7C3513C Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

Part # AS7C3513C
Description  3.3 V 32K X 16 CMOS SRAM
PDF  9 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C3513C Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation

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AS7C3513C
9/5/06, v 1.0
Alliance Memory
P. 3 of 9
®
VIL = -2.0V for pulse width less than 5ns, once per cycle.
VIH = VCC +2.0V for pulse width less than 5ns, once per cycle.
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VCC
3.0
3.3
3.6
V
Input voltage
VIH
2.0
VCC + 0.5
V
VIL
–0.5
0.8
V
Ambient operating temperature (industrial)
TA
–40
85
o C
DC operating characteristics (over the operating range)1
Parameter
Sym
Test conditions
AS7C3513C-10
Unit
Min
Max
Input leakage current
| I
LI |
VCC = Max
VIN = GND to VCC
–5
µA
Output leakage current
| I
LO |
VCC = Max
CE = VIH,
VOUT = GND to VCC
–5
µA
Operating power supply current
ICC
VCC = Max,
CE
≤ V
IL, IOUT = 0mA
f = fMax
160
mA
Standby power supply current
ISB
VCC = Max,
CE
≥ V
IH, f = fMax
–45
mA
ISB1
VCC = Max, CE ≥ VCC–0.2 V,
VIN ≤ 0.2 V or
VIN ≥ VCC–0.2 V, f = 0
–10
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
V
Capacitance (f = 1MHz, Ta = 25 °C, VCC = NOMINAL)
2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE, LB, UB
VIN = 3dV
6
pF
I/O capacitance
CI/O
I/O
VOUT = 3dV
7
pF
Note:
1. This parameter is guaranteed by device characterization, but is not production tested.



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