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M63828DP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M63828DP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 6 page ![]() Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS 0 0 0.5 1.0 1.5 2.0 25 50 75 85 100 0 0 100 200 Ta = –40 °C Ta = 85 °C Ta = 25 °C 300 400 500 0.4 0.8 1.2 1.6 0 0 100 200 300 400 500 q w e r t y u 20 40 60 80 100 0 0 100 200 300 400 500 q w e r t y u 20 40 60 80 100 0 0 100 200 300 400 500 q w e r t y u 20 40 60 80 100 0 0 100 200 300 400 500 q w e r t y u 20 40 60 80 100 M63828WP M63828DP 0.764 0.520 Thermal Derating Factor Characteristics Ambient temperature Ta ( °C) Clamping Diode Characteristics Forward bias voltage VF (V) Duty-Cycle-Collector Characteristics (M63828WP) Duty cycle (%) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C Duty-Cycle-Collector Characteristics (M63828DP) Duty cycle (%) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C Duty-Cycle-Collector Characteristics (M63828WP) Duty cycle (%) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C Duty-Cycle-Collector Characteristics (M63828DP) Duty cycle (%) Taiwan A’ssy product |
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