P6SMB11CAT3G Series, SZP6SMB11CAT3G Series

http://onsemi.com

2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance, Junction−to−Lead

PD

RqJL

3.0

40

25

W

mW/C

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance, Junction−to−Ambient

PD

RqJA

0.55

4.4

226

W

mW/C

C/W

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive

2. 1 square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

QVBR

Maximum Temperature Coefficient of VBR

Bi−Directional TVS

IPP

IPP

V

I

IR

IT

IT

IR

VRWM

VC VBR

VRWM

VC

VBR

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device*

Device

Marking

VRWM

(Note 4)

IR @

VRWM

Breakdown Voltage

VC @ IPP (Note 6)

QVBR

Ctyp

(Note 7)

VBR Volts (Note 5)

@ IT

VC

IPP

Volts

mA

Min

Nom

Max

mA

Volts

Amps

%/C

pF

P6SMB11CAT3G

P6SMB12CAT3G

11C

12C

9.4

10.2

5

5

10.5

11.4

11.05

12

11.6

12.6

1

1

15.6

16.7

38

36

0.075

0.078

865

800

P6SMB15CAT3G

P6SMB16CAT3G

P6SMB18CAT3G

P6SMB20CAT3G

15C

16C

18C

20C

12.8

13.6

15.3

17.1

5

5

5

5

14.3

15.2

17.1

19

15.05

16

18

20

15.8

16.8

18.9

21

1

1

1

1

21.2

22.5

25.2

27.7

28

27

24

22

0.084

0.086

0.088

0.09

645

610

545

490

P6SMB22CAT3G

P6SMB24CAT3G

P6SMB27CAT3G

P6SMB30CAT3G

22C

24C

27C

30C

18.8

20.5

23.1

25.6

5

5

5

5

20.9

22.8

25.7

28.5

22

24

27.05

30

23.1

25.2

28.4

31.5

1

1

1

1

30.6

33.2

37.5

41.4

20

18

16

14.4

0.09

0.094

0.096

0.097

450

415

370

335

P6SMB33CAT3G

P6SMB36CAT3G

P6SMB39CAT3G

P6SMB43CAT3G

33C

36C

39C

43C

28.2

30.8

33.3

36.8

5

5

5

5

31.4

34.2

37.1

40.9

33.05

36

39.05

43.05

34.7

37.8

41

45.2

1

1

1

1

45.7

49.9

53.9

59.3

13.2

12

11.2

10.1

0.098

0.099

0.1

0.101

305

280

260

240

P6SMB47CAT3G

P6SMB51CAT3G

P6SMB56CAT3G

P6SMB62CAT3G

47C

51C

56C

62C

40.2

43.6

47.8

53

5

5

5

5

44.7

48.5

53.2

58.9

47.05

51.05

56

62

49.4

53.6

58.8

65.1

1

1

1

1

64.8

70.1

77

85

9.3

8.6

7.8

7.1

0.101

0.102

0.103

0.104

220

205

185

170

P6SMB68CAT3G

P6SMB75CAT3G

P6SMB82CAT3G

68C

75C

82C

58.1

64.1

70.1

5

5

5

64.6

71.3

77.9

68

75.05

82

71.4

78.8

86.1

1

1

1

92

103

113

6.5

5.8

5.3

0.104

0.105

0.105

155

140

130

4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than

the DC or continuous peak operating voltage level.

5. VBR measured at pulse test current IT at an ambient temperature of 25C.

6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.

7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25C

*Include SZ-prefix devices where applicable.