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BTS113 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BTS113 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor BTS113 www.iscsemi.com 1 FEATURES · Drain Current -ID= 11.5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.17Ω(Max)@VGS= 4.5V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ± 10 V ID Drain Current(DC) 11.5 A IDM Drain Current(Pulse ) 46 A PD Total Dissipation 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.1 ℃ /W 3 2 1 TO-220C Package |
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