1

IPD60R180CM8

Rev.2.1,2024-03-21

Final Data Sheet

tab

1

2

3

DPAK

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

*1

*2

*1: Internal body diode

*2: Integrated ESD diode

MOSFET

600VCoolMOSªCM8PowerTransistor

TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor

highvoltagepowerMOSFETs,designedaccordingtothesuperjunction

(SJ)principleandpioneeredbyInfineonTechnologies.The600V

CoolMOS™CM8seriesisthesuccessortotheCoolMOS™7.

ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellent

easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD)

forallproductswithoutstandingrobustnessagainsthardcommutationand

excellentESDcapability.Furthermore,extremelylowswitchingand

conductionlossesofCM8,makeswitchingapplicationsevenmore

efficient.

Features

•Suitableforhardandsoftswitchingtopologiesthankstoan

 outstandingcommutationruggedness

•Significantreductionofswitchingandconductionlosses

•BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A

Benefits

•Easeofuseandfastdesign-inthroughlowringingtendencyandusage

 acrossPFCandPWMstages

•Simplifiedthermalmanagementthankstoouradvanceddieattach

 technique

•Increasedpowerdensitysolutionsenabledbyusingproductswith

 smallerfootprintandhighermanufacturingqualityduestateoftheart

 ESDprotection

•Suitableforawidevarietyofapplicationsandpowerranges

Potentialapplications

•Powersuppliesandconverters

•PFCstages&LLCresonantconverters

•Highefficiencyswitchingapplications

•e.g.Server,Telecom,EVCharging,UPS

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

650

V

RDS(on),max

180

m

Ω

Qg,typ

17

nC

ID,pulse

48

A

Eoss @ 400V

2.4

µJ

Body diode diF/dt

1300

A/µs

ESD class (HBM)

2

-

Type/OrderingCode

Package

Marking

RelatedLinks

IPD60R180CM8

PG-TO252-3

60R180C8

see Appendix A