Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-

20

V

Gate-Body Leakage Current

IGSS

VDS =0V, VGS =±

12V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =-

20V, VGS =0V

-1

µA

On Characteristics (note 2)

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.

45

-0.85

-1

.2

V

VGS =-4.5V, ID =-

7.2A

15

2

3.5

Drain-Source On-State Resistance

RDS(on)

VGS =-2.5V, ID =-6.

4A

22

40

m

Ω

Forward Transconductance

g

FS

VDS =-10V, ID =-

7.2A

16

S

Dynamic Characteristics (note 3)

Input Capacitance

Ciss

2

700

Output Capacitance

Coss

680

Reverse Transfer Capacitance

Crss

VDS =-10V,VGS =0V,f =1MHz

590

pF

Total Gate Charge

Qg

35

4

8

Gate-Source Charge

Qgs

5

Gate-Drain Charge

Qgd

VDS =-

6V,VGS =-4.5V,ID =-10A

10

nC

Drain-Source Diode Characteristics

Diode Forward Current

IS

-1

1

A

Diode Forward Voltage

(note 2)

VSD

VGS =0V, ISD=-

1.9A

-1.2

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%.

3. Guaranteed by design, not subject to production testing.

4. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, double sides, in a still air

environment with TA=25℃.

a

T =25

unless otherwise specified

SWITCHING CHARACTERISTICS (note

3)

Turn-on delay time

td(on)

VGEN=-4.5V,VDD=-10V,

ID=-

1A,Rg=10Ω

1

1

ns

Turn-on rise time

tr

35

ns

Turn-off delay time

td(off)

30

ns

Turn-off fall time

tf

10

ns

FMP2011

P-Channel Power MOSFET