isc N-Channel MOSFET Transistor

IXTY02N50D

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=25uA

500

--

--

V

VGS(th)

Gate Threshold Voltage

VDS=25V; ID=25uA

2.5

--

5.0

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=50mA

--

20

30

Ω

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

--

--

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=500V; VGS= 0

--

--

10

uA

VSD

Forward On-Voltage

IS=0.2A; VGS= 0

--

0.7

1.5

V

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