Philips Semiconductors

Product specification

Rectifier diodes

PBYR3045PTF series

schottky barrier

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual, low leakage, platinum barrier,

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

schottky barrier rectifier diodes in a

full pack, plastic envelope featuring

PBYR30-

35PTF 40PTF

45PTF

low

forward

voltage

drop

and

V

RRM

Repetitive peak reverse

35

40

45

V

absence of stored charge. These

voltage

devices

can

withstand

reverse

V

F

Forward voltage

0.65

0.65

0.65

V

voltage

transients

and

have

I

O(AV)

Output current (both

20

20

20

A

guaranteed reverse surge capability.

diodes conducting)

The devices are intended for use in

switched mode power supplies and

high frequency circuits in general

where low conduction and zero

switching losses are important.

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

3

anode 2 (a)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-35

-40

-45

V

RRM

Repetitive peak reverse voltage

-

35

40

45

V

V

RWM

Crest working reverse voltage

-

35

40

45

V

V

R

Continuous reverse voltage

T

-

35

40

45

V

I

O(AV)

Output current (both diodes

square wave;

δ = 0.5;

-

20

A

conducting)

T

I

O(RMS)

RMS forward current

-

20

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

135

A

current per diode.

t = 8.3 ms

-

150

A

sinusoidal; T

to surge; with reapplied

V

RWM(max)

I

t = 10 ms

-

91

A

I

RRM

Repetitive peak reverse current t

-

2

A

per diode.

I

RSM

Non-repetitive peak reverse

t

2

A

current per diode.

T

stg

Storage temperature

-65

175

˚C

T

j

Operating junction temperature

-

150

˚C

12

3

case

k

a1

a2

1

2

3

August 1996

1

Rev 1.100