PBYR2520CT datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR2525CT series

schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.3. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.4. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.5. Transient thermal impedance per diode;

th j-mb = f(tp).

D = 1.0

0.5

0.2

0.1

PBYR1625

Rs = 0.00875 Ohms

Vo = 0.27 V

150

147

144

141

138

135

132

IF(AV) / A

PF / W

Tmb(max) / C

D =

100

1000

10000

PBYR1625

VR / V

Cd / pF

0.2

0.4

0.6

0.8

PBYR1625

VF / V

IF / A

Tj = 25 C

Tj = 125 C

max

typ

0.1

0.01

10us

1ms

0.1s

10s

tp / s

Zth j-mb (K/W)

1uA

10uA

100uA

1mA

10mA

100mA

PBYR1625

VR / V

IR / A

Tj = 25 C

50 C

75 C

100 C

125 C

150 C

January 1997

Rev 1.000

PBYR2520CT Datasheet(PDF) 3 Page - NXP Semiconductors

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