PBYR225CT datasheet(3/5 Pages) PHILIPS

3 / 5 page

Philips Semiconductors

Product specification

Rectifier diodes

PBYR225CT series

Schottky barrier

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; per diode;

th j-sp = f(tp).

0.5

1.5

0.1

0.2

0.3

0.4

0.5

0.6

0.7

D = 1.0

0.5

0.2

0.1

PBYR225CT

Rs = 0.038 Ohms

Vo = 0.35 V

IF(AV) / A

PF / W

Tsp(max) / C

150

148.3

146.6

143.2

139.8

144.9

141.5

138.1

D =

100

1000

BYV116

VR / V

Cd / pF

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.5

1.5

PBYR225CT

VF / V

IF / A

Tj = 25 C

Tj = 125 C

typ

max

1us

10us

100us

1ms

10ms

100ms

10s

0.01

0.1

100

PBYR225CT

pulse width, tp (s)

Transient thermal impedance, Zth j-sp (K/W)

D =

1uA

10uA

100uA

1mA

10mA

100mA

BYV116

VR / V

IR / A

Tj = 25 C

50 C

75 C

100 C

125 C

150 C

March 1998

Rev 1.100

PBYR225CT Datasheet(PDF) 3 Page - NXP Semiconductors

PBYR225CT Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5

Datasheet Download

Link URL