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PBYR2045CTB Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBYR2045CTB
Description  Rectifier diodes Schottky barrier
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR2045CTB Datasheet(HTML) 2 Page - NXP Semiconductors

  PBYR2045CTB Datasheet HTML 1Page - NXP Semiconductors PBYR2045CTB Datasheet HTML 2Page - NXP Semiconductors PBYR2045CTB Datasheet HTML 3Page - NXP Semiconductors PBYR2045CTB Datasheet HTML 4Page - NXP Semiconductors PBYR2045CTB Datasheet HTML 5Page - NXP Semiconductors PBYR2045CTB Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR2045CT, PBYR2045CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
2
K/W
to mounting base
both diodes
-
-
1.5
K/W
R
th j-a
Thermal resistance junction
SOT78 package in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F = 10 A; Tj = 125˚C
-
0.45
0.57
V
I
F = 20 A; Tj = 125˚C
-
0.64
0.72
V
I
F = 20 A
-
0.64
0.84
V
I
R
Reverse current per diode
V
R = VRWM
-
0.3
1.3
mA
V
R = VRWM; Tj = 100˚C
-
22
35
mA
C
d
Junction capacitance per
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
380
-
pF
diode
October 1998
2
Rev 1.400



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