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PBYR1545CTB Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBYR1545CTB Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1545CT, PBYR1545CTB series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 3 K/W to mounting base both diodes - - 2 K/W R th j-a Thermal resistance junction SOT78 package in free air - 60 - K/W to ambient SOT404 package, pcb mounted, minimum - 50 - K/W footprint, FR4 board ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage per diode I F = 7.5 A; Tj = 125˚C - 0.44 0.57 V I F = 15 A; Tj = 125˚C - 0.63 0.72 V I F = 15 A - 0.62 0.84 V I R Reverse current per diode V R = VRWM - 0.22 1 mA V R = VRWM; Tj = 100˚C - 18 25 mA C d Junction capacitance per V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF diode October 1998 2 Rev 1.300 |
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