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BYV96D Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV96D Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1996 Jun 07 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV96 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV96D − 800 V BYV96E − 1000 V VR continuous reverse voltage BYV96D − 800 V BYV96E − 1000 V IF(AV) average forward current Ttp =55 °C; lead length = 10 mm see Fig 2; averaged over any 20 ms period; see also Fig 6 − 1.5 A Tamb =55 °C; PCB mounting (see Fig.11); see Fig 3; averaged over any 20 ms period; see also Fig 6 − 0.8 A IFRM repetitive peak forward current Ttp =55 °C; see Fig 4 − 17 A Tamb =55 °C; see Fig 5 − 9A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 35 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig 7 −65 +175 °C |
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