DMN10H220LPDW

Document number: DS42085 Rev.2 - 2

2 of 7

www.diodes.com

November 2019

© Diodes Incorporated

DMN10H220LPDW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

TC = +25°C

TC = +70°C

ID

8.0

6.4

A

Maximum Body Diode Forward Current (Note 6)

IS

8.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

32

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

32

A

Avalanche Current (Note 7)

L = 0.1mH

IAS

4.7

A

Avalanche Energy (Note 7)

L = 0.1mH

EAS

1.1

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

2.2

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

57

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

5.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

100





V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS



 

100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1



2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



168

222

m

Ω

VGS = 10V, ID = 2A



208

270

m

Ω

VGS = 4.5V, ID = 1A

Diode Forward Voltage

VSD



0.8

1.3

V

VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



384



pF

VDS = 25V, f = 1MHz,

VGS = 0V

Output Capacitance

Coss



23



Reverse Transfer Capacitance

Crss



17



Gate Resistance

RG



2.4



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg



3.7



nC

VDD = 50V, ID = 1.6A

Total Gate Charge (VGS = 10V)

Qg



6.7



Gate-Source Charge

Qgs



1.3



Gate-Drain Charge

Qgd



2



Turn-On Delay Time

tD(ON)



6.2



ns

VDD = 50V, VGS = 4.5V,

RG = 6.8Ω, ID = 1.0A

Turn-On Rise Time

tR



8.7



Turn-Off Delay Time

tD(OFF)



7.4



Turn-Off Fall Time

tF



4.2



Body Diode Reverse Recovery Time

tRR



20



ns

IS = 1.1A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



11



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.