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KSC5338D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSC5338D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor KSC5338D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 1000 V VCEO Collector-Emitter Sustaining Voltage IC= 5.0mA; IB= 0 450 V VEBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 12 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μ A ICEO Collector Cutoff Current VCE= 450V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 μ A VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 0.5 V IC= 2A; IB= 0.4A 0.75 V IC= 0.8A; IB= 0.04A 1.5 V IC= 1A; IB= 0.2A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 1.0 V IC= 2A; IB= 0.4A 1.0 V hFE DC Current Gain IC= 0.8A; VCE= 1V 15 IC= 2A; VCE= 1V 6 IC= 1A; VCE= 2.5V 18 |
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