BAS316 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1998 Mar 26

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS316

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAS316 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the SOD323 SMD plastic package.

Fig.1 Simplified outline (SOD323) and symbol.

Marking code: A6.

Cathode side indicated by a bar.

handbook, halfpage

MAM157

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the cathode tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

Ts =90 °C; note 1; see Fig.2

−

250

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward current

square wave; Tj =25 °C prior to

surge; see Fig.4

t=1

µs

−

t=1ms

−

t=1s

−

0.5

Ptot

total power dissipation

Ts =90 °C; note 1

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

BAS316 Datasheet(PDF) 2 Page - NXP Semiconductors

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