HTMS8301FUGSLASHAM datasheet(6/44 Pages) NXP

6 / 44 page

184430

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Product data sheet

PUBLIC

Rev. 3.0 — 18 March 2010

184430

6 of 44

NXP Semiconductors

HITAG µ

ISO 18000 transponder IC

7.1.5 Au bump

• Bump material:

> 99.9% pure Au

• Bump hardness:

35 – 80 HV 0.005

• Bump shear strength:

> 70 MPa

• Bump height:

μm

• Bump height uniformity:

– within a die:

± 2

μm

– within a wafer:

± 3

μm

– wafer to wafer:

± 4

μm

• Bump flatness:

± 1.5

μm

• Bump size:

– LA, LB

294 x 164

μm

– TEST, GND, VDD

60 x 60

μm

– Bump size variation:

± 5 μm

• Under bump metallization:

sputtered TiW

7.1.6 Fail die identification

No inkdots are applied to the wafer.

Electronic wafer mapping (SECS II format) covers the electrical test results and

additionally the results of mechanical/visual inspection.

See Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.

7.1.7 Map file distribution

See Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.

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