Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

Preview PDF HTML

BSC0302LS Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # BSC0302LS
Description  MOSFET OptiMOSTM 3 Power-Transistor, 120 V
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC0302LS Datasheet(HTML) 4 Page - Infineon Technologies AG

  BSC0302LS Datasheet HTML 1Page - Infineon Technologies AG BSC0302LS Datasheet HTML 2Page - Infineon Technologies AG BSC0302LS Datasheet HTML 3Page - Infineon Technologies AG BSC0302LS Datasheet HTML 4Page - Infineon Technologies AG BSC0302LS Datasheet HTML 5Page - Infineon Technologies AG BSC0302LS Datasheet HTML 6Page - Infineon Technologies AG BSC0302LS Datasheet HTML 7Page - Infineon Technologies AG BSC0302LS Datasheet HTML 8Page - Infineon Technologies AG BSC0302LS Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 13 page
background image
4
OptiMOSTM3Power-Transistor,120V
BSC0302LS
Rev.2.2,2022-09-21
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
120
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
1.85
2.4
V
VDS=VGS,ID=112µA
Zero gate voltage drain current
IDSS
-
-
0.01
1
1
100
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
6.5
7.8
8.0
9.5
m
Ω
VGS=10V,ID=50A
VGS=4.5V,ID=25A
Gate resistance
RG
-
0.85
-
Ω
-
Transconductance
gfs
60
120
-
S
|VDS|
≥2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
5600
7400
pF
VGS=0V,VDS=60V,f=1MHz
Output capacitance
1)
Coss
-
590
770
pF
VGS=0V,VDS=60V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
28
42
pF
VGS=0V,VDS=60V,f=1MHz
Turn-on delay time
td(on)
-
11
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Rise time
tr
-
9
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
37
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Fall time
tf
-
13
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
17.5
-
nC
VDD=60V,ID=25A,VGS=0to10V
Gate to drain charge
Qgd
-
12.9
-
nC
VDD=60V,ID=25A,VGS=0to10V
Switching charge
Qsw
-
20.1
-
nC
VDD=60V,ID=25A,VGS=0to10V
Gate charge total
Qg
-
79
-
nC
VDD=60V,ID=25A,VGS=0to10V
Gate plateau voltage
Vplateau
-
3.1
-
V
VDD=60V,ID=25A,VGS=0to10V
Output charge
Qoss
-
79
-
nC
VDD=60V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link to Datasheet   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com