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G60V60DF Datasheet(PDF) 5 Page - STMicroelectronics |
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G60V60DF Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() DocID024154 Rev 7 5/20 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 60 A, RG = 4.7 Ω, VGE = 15 V, see Figure 28 -60 - ns tr Current rise time - 20 - ns (di/dt)on Turn-on current slope - 2365 - A/µs td(off) Turn-off delay time - 208 - ns tf Current fall time - 14 - ns Eon (1) 1. Including the reverse recovery of the diode. Turn-on switching energy - 0.75 - mJ Eoff (2) 2. Including the tail of the collector current. Turn-off switching energy - 0.55 - mJ Ets Total switching energy - 1.3 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 60 A, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 -57 - ns tr Current rise time - 23 - ns (di/dt)on Turn-on current slope - 2191 - A/µs td(off) Turn-off delay time - 216 - ns tf Current fall time - 27 - ns Eon (1) Turn-on switching energy - 1.5 - mJ Eoff (2) Turn-off switching energy - 0.8 - mJ Ets Total switching energy - 2.3 - mJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 60 A, VR = 400 V, VGE = 15 V, diF/dt = 1000 A/µs see Figure 28 -74 - ns Qrr Reverse recovery charge - 703 - nC Irrm Reverse recovery current - 19 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 714 - A/µs Err Reverse recovery energy - 184 - µJ trr Reverse recovery time IF = 60 A, VR = 400 V, VGE = 15 V diF/dt = 1000 A/µs TJ = 175 °C, see Figure 28 - 131 - ns Qrr Reverse recovery charge - 2816 - nC Irrm Reverse recovery current - 43 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 404 - A/µs Err Reverse recovery energy - 821 - µJ |
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