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210N4LF7 Datasheet(PDF) 5 Page - STMicroelectronics |
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210N4LF7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GADG021220191018SOA 102 101 100 10-1 100 101 ID (A) VDS (V) Operation in this area is limited by R DS(on) T j ≤175 °C T c = 25°C single pulse t p =10 µs t p =100 µs t p =1 ms t p =10 ms Figure 2. Maximum transient thermal impedance GADG021220191018ZTH 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 K tp (s) Single pulse δ = 0.02 δ = 0.01 δ = 0.05 δ = 0.2 δ = 0.5 δ = 0.1 Figure 3. Typical output characteristics GADG021220191052OCH 150 100 50 0 0 2 4 6 8 ID (A) VDS (V) VGS = 5 to 10 V VGS = 4 V VGS = 3 V Figure 4. Typical transfer characteristics GADG021220191005TCH 500 400 300 200 100 0 0 1 2 3 4 ID (A) VGS (V) TJ = 175 °C TJ = -50°C TJ = 25 °C Figure 5. Typical gate charge characteristics GADG021220191059QVG 12 10 8 6 4 2 0 0 20 40 60 VGS (V) Qg (nC) VDS = 20 V ID = 120 A Figure 6. Typical drain-source on-resistance GADG021220191101RID 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 RDS(on) (mΩ) ID (A) VGS = 4.5 V VGS = 10 V STL210N4LF7AG Electrical characteristics (curves) DS12887 - Rev 3 page 5/16 |
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