13N50DM2 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	13N50DM2

Description	Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 16 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GIPG160420181303SOA

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

Operation in this area is

limited by R DS(on)

single pulse

TJ≤150 °C

TC=25 °C

VGS=10 V

tp=10 ms

Figure 2. Normalized transient thermal impedance

GC20460

100

10-1

10-2

10-5

10-4

10-3

10-2

10-1

tp (s)

Figure 3. Typical output characteristics

GIPG160420181305OCH

(A)

VDS (V)

VGS =5 V

VGS =6 V

VGS = 8, 9, 10 V

VGS =7 V

Figure 4. Typical transfer characteristics

GIPG160420181305TCH

4.5

5.0

5.5

6.0

6.5

7.0

7.5

(A)

VGS (V)

VDS = 15 V

Figure 5. Normalized gate threshold vs temperature

GIPG120420181044VTH

1.2

1.0

0.8

0.6

0.4

-75

-25

125

VGS(th)

(norm.)

Tj(°C)

ID=250 μA

Figure 6. Normalized breakdown voltage vs temperature

GIPG120420181045BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

Tj(°C)

STD13N50DM2AG

Electrical characteristics (curves)

DS12210 - Rev 4

page 5/16

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