BAS386 datasheet(2/4 Pages) VISHAY

2 / 4 page

BAS386

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 16-Nov-2021

Document Number: 85505

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Reverse Current vs. Junction Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Diode Capacitance vs. Reverse Voltage

Fig. 5 - Board for RthJA Definition (in mm)

15827

100

150

200

250

300

350

400

450

500

100

125

150

Tj - Junction Temperature (°C)

- Limit

at 100 % V

- Limit

at 80 % V

RthJA = 540 K/W

VR = 50 V

100

1000

10000

100

125

150

15828

Tj - Junction Temperature (°C)

VR = VRRM

15829

0.5

1.0

1.5

0.1

100

1000

VF - Forward Voltage (V)

Tj = 25 °C

Tj = 125 °C

15830

0.1

100

f = 1 MHz

VR - Reverse Voltage (V)

2.5

0.71

1.3

1.27

0.152

0.355

95 10329

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