IRFP450A datasheet(2/11 Pages) VISHAY

2 / 11 page

IRFP450A

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

Document Number: 91230

For technical questions, contact: hvmos.techsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-0.65

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.58

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 8.4 Ab

0.40

Forward Transconductance

gfs

VDS = 50 V, ID = 8.4 Ab

7.8

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

2038

Output Capacitance

Coss

-307

Reverse Transfer Capacitance

Crss

-10

Output Capacitance

Coss

VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz

2859

Output Capacitance

Coss

VGS = 0 V; VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VGS = 0 V; VDS = 0 V to 400 Vc

Total Gate Charge

VGS = 10 V

ID = 14 A, VDS = 400 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 14 A,

RG = 6.2

Ω, RD = 17 Ω, see fig. 10b

-15

Rise Time

-36

Turn-Off Delay Time

td(off)

-35

Fall Time

-29

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 14 A, VGS = 0 Vb

1.4

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb

487

731

Body Diode Reverse Recovery Charge

Qrr

-3.9

5.8

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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