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STTH810FP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH810FP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Ultrafast Recovery Rectifier STTH810FP FEATURES · Ultrafast Recovery Time · Low Forward Voltage · Low Leakage Current · High Temperature Glass Passivated Junction · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1000 V IF(AV) Average Rectified Forward Current (Rated VR) 8 A IFM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) 16 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 100 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ 1m |
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