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ISCPL322D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCPL322D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor ISCPL322D FEATURES · Drain Current ID= -17A@ TC=25℃ · Drain Source Voltage- : VDSS= -100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -17 A IDM Drain Current-Single Pluse -68 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.33 ℃ /W |
Similar Part No. - ISCPL322D |
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Similar Description - ISCPL322D |
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