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2SC2963 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2963 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC2963 DESCRIPTION · DC Current Gain : hFE = 80-250 @ IC= 1A · Collector-Emitter Sustaining Voltage : VCEO(SUS) =70V (min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.3 ℃ /W |
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