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ISCPL298F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCPL298F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor ISCPL298F FEATURES · Drain Current –ID= -10A@ TC=25℃ · Drain Source Voltage- : VDSS= -100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · DC/DC Converters · DC/AC Inverters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -10 A IDM Drain Current-Single Pluse -40 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃ /W |
Similar Part No. - ISCPL298F |
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Similar Description - ISCPL298F |
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