P9NK90Z datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical ratings

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Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK/

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

900

VDGR

Drain-gate voltage (RGS = 20KΩ)

900

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

8(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

5(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

32(1)

PTOT

Total dissipation at TC = 25°C

160

Derating Factor

1.28

0.32

W/°C

Vesd(G-S)

G-S ESD (HBM C=100pF, R=1.5k

Ω)

4KV

dv/dt(3)

ISD ≤10A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

TO-20FP

TO-247

Rthj-case

Thermal resistance junction-case Max

0.78

3.1

0.78

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, VDD=50V)

300

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