2SD965 datasheet(1/2 Pages) PANASONIC

Part #	2SD965

Description	Silicon NPN epitaxial planer type(For low-frequency power amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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1

Transistor

2SD965

Silicon NPN epitaxial planer type

For low-frequency power amplification

For stroboscope

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Satisfactory operation performances at high efficiency with the

low-voltage power supply.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

40

20

7

8

5

0.75

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

ICEO

IEBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

fT

Cob

Conditions

VCB = 10V, IE = 0

VCE = 10V, IB = 0

VEB = 7V, IC = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 2V, IC = 0.5A

*2

VCE = 2V, IC = 2A

*2

IC = 3A, IB = 0.1A

*2

VCB = 6V, IE = –50mA, f = 200MHz

VCB = 20V, IE = 0, f = 1MHz

min

20

7

230

150

typ

150

max

0.1

1.0

0.1

600

1

50

Unit

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

Q

R

hFE1

230 ~ 380

340 ~ 600

*2 Pulse measurement

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