SQJ409EP datasheet(2/10 Pages) VISHAY

2 / 10 page

SQJ409EP

www.vishay.com

Vishay Siliconix

S16-2658-Rev. A, 02-Jan-17

Document Number: 77707

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0, ID = -250 μA

-40

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = -250 μA

-1.5

-2.0

-2.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = -40 V

-1

μA

VGS = 0 V

VDS = -40 V, TJ = 125 °C

-50

VGS = 0 V

VDS = -40 V, TJ = 175 °C

-150

On-state drain current a

ID(on)

VGS = -10 V

VDS  -5 V

-30

Drain-source on-state resistance a

RDS(on)

VGS = -10 V

ID = -10 A

0.0058

0.0070



VGS = -10 V

ID = -10 A, TJ = 125 °C

0.0106

VGS = -10 V

ID = -10 A, TJ = 175 °C

0.0126

VGS = -4.5 V

ID = -6 A

0.0083

0.0100

Forward transconductance b

gfs

VDS = -15 V, ID = -10 A

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = -25 V, f = 1 MHz

8400

11 000

Output capacitance

Coss

620

850

Reverse transfer capacitance

Crss

510

700

Total gate charge c

VGS = -10 V

VDS = -20 V, ID = -5 A

170

260

Gate-source charge c

Qgs

-24

Gate-drain charge c

Qgd

-35

Gate resistance

f = 1 MHz

0.50

1.08

1.70



Turn-on delay time c

td(on)

VDD = -20 V, RL = 4 

ID  -5 A, VGEN = -10 V, Rg = 1 

-23

Rise time c

-18

Turn-off delay time c

td(off)

-75

120

Fall time c

-12

Source-Drain Diode Ratings and Characteristics b

Pulsed current a

ISM

-150

Forward voltage

VSD

IF = -10 A, VGS = 0 V

-0.76

-1.2

Body diode reverse recovery time

trr

IF = -10 A, dI/dt = 100 A/μs

-39

Body diode reverse recovery charge

Qrr

-45

100

Reverse recovery fall time

-22

Reverse recovery rise time

-19

Body diode peak reverse recovery

current

IRM(REC)

--2.3

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