V31M103C datasheet(2/5 Pages) VISHAY

2 / 5 page

V31M103C

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Vishay General Semiconductor

Revision: 22-Dec-2020

Document Number: 98158

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 5 ms

Note

(1) Thermal resistance junction-to-case to follow JEDEC® 51-14 transient dual interface test method (TDIM)

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage

per diode

IF = 5 A

TJ = 25 °C

VF (1)

0.53

IF = 7.5 A

0.58

IF = 15 A

0.71

0.78

IF = 5 A

TJ = 125 °C

0.45

IF = 7.5 A

0.51

IF = 15 A

0.62

0.68

Reverse current at rated VR

per diode

VR = 70 V

TJ = 25 °C

IR (2)

0.004

TJ = 125 °C

2.5

VR = 100 V

TJ = 25 °C

0.4

TJ = 125 °C

6.0

Typical junction capacitance

4 V, 1MHz

1600

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V31M103C

UNIT

Typical thermal resistance per device

RθJC

(1)

1.0

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V31M103C-M3/P

1.88

50/tube

Tube

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