20 GHz to 44 GHz, GaAs, pHEMT,

31.5 dBm (>1 W), MMIC Power Amplifier

Data Sheet

ADPA7007

Rev. 0

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FEATURES

Output P1dB: 29 dBm typical at 34 GHz to 44 GHz

Gain: 20.5 dB typical at 34 GHz to 44 GHz

Output IP3: up to 42.5 dBm typical

Supply voltage: 5 V at 1400 mA

50 Ω matched input/output

18-terminal, 7 mm × 7 mm LCC_HS package

Integrated power detector

APPLICATIONS

Military and space

Test instrumentation

Communications

FUNCTIONAL BLOCK DIAGRAM

1

2

3

4

10

11

12

13

ADPA7007

Figure 1.

GENERAL DESCRIPTION

The ADPA7007 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transfer (pHEMT), monolithic microwave

integrated circuit (MMIC), 31.5 dBm saturated output power

(>1 W) power amplifier, with an integrated temperature

compensated, on-chip power detector that operates between

20 GHz and 44 GHz. The ADPA7007 provides 20.5 dB of small

signal gain and approximately 32 dBm of saturated output power

at 32 GHz from a 5 V supply (see Figure 26). The ADPA7007

has an output IP3 of 42.5 dBm and is ideal for linear

applications such as electronic countermeasure and

instrumentation applications requiring >30 dBm of efficient

saturated output power. The RF input/outputs are internally

matched and dc blocked for ease of integration into higher level

assemblies. The ADPA7007 is packaged in a 7 mm × 7 mm,

18-terminal ceramic leadless chip carrier with heat sink

(LCC_HS) that exhibits low thermal resistance and is

compatible with surface-mount manufacturing techniques.