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P1020HDB Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P1020HDB Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  P1020HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS 200 MAXIMUM ±20 10 V IDM Pulsed Drain Current 1 VGS TYPICAL 52 6.3 6.5 ID PD TJ, TSTG SYMBOL LIMITS °C -55 to 150 mJ W UNITS 26 A 21.1 20 SYMBOL Avalanche Current IAS Junction-to-Ambient Junction & Storage Temperature Range Power Dissipation EAS Avalanche Energy L = 1mH RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 325mΩ @V GS = 10V 10A ID 200V Continuous Drain Current TC = 25 °C TC = 25 °C TC = 100 °C RqJC RqJA THERMAL RESISTANCE °C / W Junction-to-Case 2.4 62.5 REV 1.0 1 2017/6/9 |
Similar Part No. - P1020HDB |
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Similar Description - P1020HDB |
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