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ISC13009 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISC13009
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISC13009 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISC13009 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISC13009 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISC13009
DESCRIPTION
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching regulators
·
Ultrasonic generators
·
High frequency inverters
·
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
9
V
IC
Collector Current-Continuous
12
A
PC
Collector Power Dissipation
@ TC=25℃
130
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.04
℃
/W


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